Field Effect Transistor Memory
GPTKB entity
Statements (18)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
|
| gptkbp:application |
gptkb:personal_computer
data storage |
| gptkbp:component |
integrated circuits
|
| gptkbp:enables |
high-density memory chips
|
| gptkbp:inventedBy |
1960s
|
| gptkbp:relatedTo |
gptkb:battery
gptkb:SDRAM SRAM Flash memory |
| gptkbp:replacedBy |
magnetic core memory
|
| gptkbp:technology |
MOS technology
|
| gptkbp:type |
gptkb:SDRAM
gptkb:volatile_memory |
| gptkbp:uses |
field-effect transistors
|
| gptkbp:bfsParent |
gptkb:US_Patent_3,387,286_(One-Transistor_DRAM_Cell)
|
| gptkbp:bfsLayer |
7
|
| https://www.w3.org/2000/01/rdf-schema#label |
Field Effect Transistor Memory
|