Statements (16)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:US_patent
|
| gptkbp:allows |
A method of producing a semiconductor device with improved reliability by forming an insulating film and a conductive film in a specific sequence.
|
| gptkbp:application |
US06/744,370
|
| gptkbp:assignee |
gptkb:Hitachi_Ltd
|
| gptkbp:country |
gptkb:United_States
|
| gptkbp:cpcClassification |
H01L21/00
|
| gptkbp:fieldOfInvention |
semiconductor device manufacturing
|
| gptkbp:filingDate |
1985-06-10
|
| https://www.w3.org/2000/01/rdf-schema#label |
US4683202A
|
| gptkbp:inventedBy |
gptkb:Masahiro_Asano
|
| gptkbp:priorityDate |
1984-06-11
|
| gptkbp:publicationDate |
1987-07-28
|
| gptkbp:status |
expired
|
| gptkbp:title |
Method of producing a semiconductor device
|
| gptkbp:bfsParent |
gptkb:polymerase_chain_reaction
|
| gptkbp:bfsLayer |
5
|