Statements (16)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:US_patent
|
| gptkbp:allows |
A method of producing a semiconductor device with a buried layer, which improves the characteristics of the device by forming a high-concentration impurity region.
|
| gptkbp:application |
gptkb:US06/749,073
|
| gptkbp:assignee |
gptkb:Hitachi_Ltd
|
| gptkbp:class |
H01L21/265
|
| gptkbp:country |
gptkb:United_States
|
| gptkbp:filingDate |
1985-06-28
|
| https://www.w3.org/2000/01/rdf-schema#label |
US4683195A
|
| gptkbp:inventedBy |
gptkb:Kazuo_Yamada
|
| gptkbp:language |
English
|
| gptkbp:priorityDate |
1984-06-29
|
| gptkbp:publicationDate |
1987-07-28
|
| gptkbp:status |
Expired - Lifetime
|
| gptkbp:title |
Method of producing a semiconductor device with a buried layer
|
| gptkbp:bfsParent |
gptkb:PCR_(polymerase_chain_reaction)
|
| gptkbp:bfsLayer |
7
|