Statements (31)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
|
| gptkbp:advantage |
difficult to manufacture
low output power limited voltage range |
| gptkbp:alsoKnownAs |
gptkb:Esaki_diode
|
| gptkbp:application |
logic circuits
frequency converters microwave oscillators pulse generators high-speed electronics |
| gptkbp:awarded |
gptkb:Nobel_Prize_in_Physics_to_Leo_Esaki_(1973)
|
| gptkbp:characteristic |
negative resistance
|
| gptkbp:feature |
heavily doped p-n junction
low voltage operation very fast response |
| https://www.w3.org/2000/01/rdf-schema#label |
Tunnel Diode
|
| gptkbp:introducedIn |
1957
|
| gptkbp:inventedBy |
gptkb:Leo_Esaki
|
| gptkbp:material |
gptkb:gallium_arsenide
silicon germanium |
| gptkbp:namedAfter |
quantum tunneling effect
|
| gptkbp:operates |
quantum mechanical tunneling
|
| gptkbp:replacedBy |
transistors in many applications
|
| gptkbp:symbol |
special diode symbol with bent bar
|
| gptkbp:usedFor |
amplifiers
oscillators high-speed switching microwave frequency applications |
| gptkbp:bfsParent |
gptkb:Varactor_Diodes
|
| gptkbp:bfsLayer |
6
|