Statements (21)
Predicate | Object |
---|---|
gptkbp:instanceOf |
gptkb:microprocessor
tunnel diode |
gptkbp:alternativeName |
tunnel diode
|
gptkbp:awarded |
gptkb:Nobel_Prize_in_Physics_(to_Leo_Esaki,_1973)
|
gptkbp:characteristic |
high doping concentration
low forward voltage drop very fast response |
gptkbp:exhibits |
quantum tunneling
|
gptkbp:hasProperty |
negative resistance
|
https://www.w3.org/2000/01/rdf-schema#label |
Esaki diode
|
gptkbp:introducedIn |
1957
|
gptkbp:inventedBy |
gptkb:Leo_Esaki
|
gptkbp:material |
heavily doped p-n junction
|
gptkbp:namedAfter |
gptkb:Leo_Esaki
|
gptkbp:symbol |
D_T
|
gptkbp:usedIn |
amplifiers
oscillators high-speed switching microwave applications |
gptkbp:bfsParent |
gptkb:Leo_Esaki
|
gptkbp:bfsLayer |
5
|