Statements (21)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
gptkb:tunnel_diode |
| gptkbp:alternativeName |
gptkb:tunnel_diode
|
| gptkbp:awarded |
gptkb:Nobel_Prize_in_Physics_(to_Leo_Esaki,_1973)
|
| gptkbp:characteristic |
high doping concentration
low forward voltage drop very fast response |
| gptkbp:exhibits |
quantum tunneling
|
| gptkbp:hasProperty |
negative resistance
|
| gptkbp:introducedIn |
1957
|
| gptkbp:inventedBy |
gptkb:Leo_Esaki
|
| gptkbp:material |
heavily doped p-n junction
|
| gptkbp:namedAfter |
gptkb:Leo_Esaki
|
| gptkbp:symbol |
D_T
|
| gptkbp:usedIn |
amplifiers
oscillators high-speed switching microwave applications |
| gptkbp:bfsParent |
gptkb:Leo_Esaki
|
| gptkbp:bfsLayer |
5
|
| https://www.w3.org/2000/01/rdf-schema#label |
Esaki diode
|