Statements (42)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
vertical electrical connection |
| gptkbp:alternativeTo |
wire bonding
flip-chip technology |
| gptkbp:challenge |
reliability
cost thermal stress yield loss |
| gptkbp:enables |
gptkb:AI_accelerators
gptkb:3D_NAND data centers high-performance computing mobile devices lower power consumption multi-chip modules high bandwidth interconnects reduced form factor shorter interconnect lengths vertical stacking of dies |
| gptkbp:fabricationProcess |
deep reactive-ion etching
copper electroplating |
| https://www.w3.org/2000/01/rdf-schema#label |
Through-Silicon Via (TSV)
|
| gptkbp:introducedIn |
early 2000s
|
| gptkbp:material |
copper
tungsten |
| gptkbp:relatedTo |
heterogeneous integration
2.5D integration fan-out wafer-level packaging system-in-package (SiP) |
| gptkbp:standardizedBy |
gptkb:JEDEC
|
| gptkbp:usedBy |
gptkb:Samsung
gptkb:Intel gptkb:TSMC Micron |
| gptkbp:usedIn |
gptkb:HBM_(High_Bandwidth_Memory)
image sensors MEMS devices advanced packaging 3D integrated circuits logic-memory integration |
| gptkbp:bfsParent |
gptkb:Package_on_Package_(PoP)
|
| gptkbp:bfsLayer |
7
|