TSV (Through-Silicon Via) technology
GPTKB entity
Statements (51)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
|
| gptkbp:alternativeTo |
wire bonding
flip-chip technology |
| gptkbp:challenge |
reliability
cost thermal stress yield loss |
| gptkbp:developedBy |
early 2000s
|
| gptkbp:enables |
gptkb:consumer_electronics
gptkb:AI_accelerators IoT devices data centers high-performance computing industrial equipment medical devices wearable devices mobile devices automotive electronics higher data rates lower latency optical interconnects image sensors sensor integration MEMS devices power devices heterogeneous integration logic-memory integration shorter interconnect lengths RF devices stacked DRAM system-in-package (SiP) vertical electrical connections through silicon wafers high bandwidth memory (HBM) high-density interconnects multi-chip modules (MCM) |
| https://www.w3.org/2000/01/rdf-schema#label |
TSV (Through-Silicon Via) technology
|
| gptkbp:improves |
signal transmission speed
|
| gptkbp:key |
copper electroplating
chemical mechanical polishing (CMP) deep reactive ion etching (DRIE) dielectric liner deposition |
| gptkbp:reduces |
power consumption
form factor of devices |
| gptkbp:usedBy |
gptkb:Intel
gptkb:Samsung_Electronics gptkb:TSMC gptkb:Micron_Technology |
| gptkbp:usedIn |
advanced packaging
3D integrated circuits |
| gptkbp:bfsParent |
gptkb:HBM3_memory
|
| gptkbp:bfsLayer |
7
|