Statements (31)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
semiconductor process node
|
| gptkbp:actualGatePitch |
~51 nm
|
| gptkbp:actualMetalPitch |
~30 nm
|
| gptkbp:announced |
2021
|
| gptkbp:commercialProductionStart |
2022
|
| gptkbp:developedBy |
gptkb:TSMC
|
| gptkbp:EUVLayers |
up to 14
|
| https://www.w3.org/2000/01/rdf-schema#label |
TSMC N4
|
| gptkbp:improvementOverN5 |
lower power consumption
higher performance higher yield |
| gptkbp:lithography |
DUV
|
| gptkbp:locationOfFabs |
gptkb:China
gptkb:Taiwan |
| gptkbp:notableChips |
gptkb:NVIDIA_Ada_Lovelace_GPUs
gptkb:Apple_A16_Bionic |
| gptkbp:predecessor |
gptkb:TSMC_N5
|
| gptkbp:processNodeFamily |
TSMC 5nm family
|
| gptkbp:size |
4 nm (marketing name)
|
| gptkbp:successor |
TSMC N3
|
| gptkbp:targetMarket |
mobile devices
high performance computing |
| gptkbp:technology |
gptkb:FinFET
|
| gptkbp:transistorDensity |
~137 million transistors per mm²
|
| gptkbp:usedBy |
gptkb:Apple
gptkb:AMD gptkb:NVIDIA gptkb:MediaTek |
| gptkbp:bfsParent |
gptkb:TSMC_4N
gptkb:TSMC_N5 |
| gptkbp:bfsLayer |
7
|