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gptkbp:instanceOf
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semiconductor manufacturing process
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|
gptkbp:competitor
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Intel 10nm process
Samsung 7nm process
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|
gptkbp:developedBy
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gptkb:TSMC
|
|
gptkbp:EUVIntroducedIn
|
N7+ variant
|
|
gptkbp:EUVLayersInN7+
|
up to 4 layers
|
|
gptkbp:finFETGeneration
|
3rd generation
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|
https://www.w3.org/2000/01/rdf-schema#label
|
TSMC 7nm process
|
|
gptkbp:improves
|
TSMC 10nm process
|
|
gptkbp:introducedIn
|
2018
|
|
gptkbp:marketedAs
|
N7
N7 Pro
N7+
N7P
|
|
gptkbp:massProductionStart
|
April 2018
|
|
gptkbp:notableClient
|
gptkb:Apple
gptkb:Bitmain
gptkb:AMD
gptkb:Qualcomm
gptkb:AMD_Radeon_VII
gptkb:AMD_Ryzen_3000_series
gptkb:Broadcom
gptkb:Huawei
gptkb:NVIDIA
gptkb:MediaTek
gptkb:Xilinx
gptkb:Marvell
gptkb:Apple_A13_Bionic
gptkb:HiSilicon
|
|
gptkbp:performanceIncreaseComparedTo10nm
|
up to 20%
|
|
gptkbp:powerReductionComparedTo10nm
|
up to 40%
|
|
gptkbp:predecessor
|
TSMC 10nm process
|
|
gptkbp:size
|
7 nanometers
|
|
gptkbp:successor
|
gptkb:TSMC_5nm_process
|
|
gptkbp:technology
|
7 nanometer
|
|
gptkbp:transistorDensity
|
~114 million transistors/mm² (N7+)
~90 million transistors/mm² (N7)
|
|
gptkbp:usedFor
|
high-performance computing
AI chips
mobile processors
automotive chips
|
|
gptkbp:usedIn
|
gptkb:Qualcomm_Snapdragon_855
gptkb:Apple_A12_Bionic
AMD Zen 2 CPUs
Huawei Kirin 980
|
|
gptkbp:usesLithography
|
DUV
EUV (for N7+ variant)
|
|
gptkbp:waferSize
|
300 mm
|
|
gptkbp:yieldRate
|
high (over 80% for mature designs)
|
|
gptkbp:bfsParent
|
gptkb:Zen_2_microarchitecture
|
|
gptkbp:bfsLayer
|
7
|