Statements (27)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
semiconductor manufacturing process
|
| gptkbp:developedBy |
gptkb:TSMC
|
| gptkbp:finFETGeneration |
3rd generation FinFET
|
| https://www.w3.org/2000/01/rdf-schema#label |
TSMC 5nm process
|
| gptkbp:improves |
15% over 7nm
|
| gptkbp:introducedIn |
2019
|
| gptkbp:mainFabLocation |
gptkb:Taiwan
|
| gptkbp:massProductionStart |
2020
|
| gptkbp:notableChips |
gptkb:Apple_A14_Bionic
gptkb:Apple_M1 gptkb:Apple_M2 gptkb:Apple_A15_Bionic |
| gptkbp:powerEfficiencyImprovement |
30% over 7nm
|
| gptkbp:predecessor |
gptkb:TSMC_7nm_process
|
| gptkbp:successor |
TSMC 3nm process
|
| gptkbp:technology |
5 nanometer
|
| gptkbp:transistorDensity |
171.3 million transistors per mm²
|
| gptkbp:usedBy |
gptkb:Apple
gptkb:AMD gptkb:Qualcomm gptkb:MediaTek |
| gptkbp:usedFor |
high-performance computing chips
smartphone chips |
| gptkbp:uses |
EUV lithography
|
| gptkbp:bfsParent |
gptkb:TSMC_4N
gptkb:Radeon_RX_7000_series |
| gptkbp:bfsLayer |
7
|