Statements (29)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:semiconductor_process_node
|
| gptkbp:commercialProductionStart |
April 2020
|
| gptkbp:developedBy |
gptkb:TSMC
|
| gptkbp:EUVLithography |
used
|
| gptkbp:locationOfFabs |
gptkb:Taiwan
gptkb:Arizona,_USA |
| gptkbp:notableClient |
gptkb:Apple
gptkb:AMD gptkb:Qualcomm |
| gptkbp:notableFor |
first TSMC node to use EUV in critical layers
high performance and power efficiency |
| gptkbp:predecessor |
TSMC 7 nm
|
| gptkbp:processFamily |
gptkb:N4X
N4 N5 N5P N4P |
| gptkbp:size |
5 nanometers
|
| gptkbp:successor |
TSMC 3 nm
|
| gptkbp:technology |
gptkb:FinFET
|
| gptkbp:transistorDensity |
171.3 million transistors per mm²
|
| gptkbp:usedIn |
gptkb:Apple_A14_Bionic
gptkb:Apple_M1 gptkb:Apple_M2 gptkb:Apple_A15_Bionic |
| gptkbp:bfsParent |
gptkb:Zen_4_microarchitecture
gptkb:Apple_M2_(6th_gen) |
| gptkbp:bfsLayer |
7
|
| https://www.w3.org/2000/01/rdf-schema#label |
TSMC 5 nm
|