Statements (28)
Predicate | Object |
---|---|
gptkbp:instanceOf |
semiconductor process node
|
gptkbp:commercialProductionStart |
April 2020
|
gptkbp:developedBy |
gptkb:TSMC
|
gptkbp:EUVLithography |
used
|
https://www.w3.org/2000/01/rdf-schema#label |
TSMC 5 nm
|
gptkbp:locationOfFabs |
gptkb:Taiwan
gptkb:Arizona,_USA |
gptkbp:notableClient |
gptkb:Apple
gptkb:AMD gptkb:Qualcomm |
gptkbp:notableFor |
first TSMC node to use EUV in critical layers
high performance and power efficiency |
gptkbp:predecessor |
TSMC 7 nm
|
gptkbp:processFamily |
gptkb:N4X
N4 N5 N5P N4P |
gptkbp:size |
5 nanometers
|
gptkbp:successor |
TSMC 3 nm
|
gptkbp:technology |
gptkb:FinFET
|
gptkbp:transistorDensity |
171.3 million transistors per mm²
|
gptkbp:usedIn |
gptkb:Apple_A14_Bionic
gptkb:Apple_M1 gptkb:Apple_M2 gptkb:Apple_A15_Bionic |
gptkbp:bfsParent |
gptkb:Apple_M2_chip_(2022)
|
gptkbp:bfsLayer |
5
|