Statements (21)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:semiconductor_process_node
|
| gptkbp:commercialLaunchYear |
2016
|
| gptkbp:countryOfOrigin |
gptkb:Hsinchu,_Taiwan
|
| gptkbp:developedBy |
gptkb:TSMC
|
| gptkbp:lithography |
193nm immersion lithography
|
| gptkbp:notableClient |
gptkb:Apple
gptkb:HiSilicon |
| gptkbp:predecessor |
TSMC 16nm
|
| gptkbp:primaryUse |
mobile SoCs
|
| gptkbp:size |
10nm
|
| gptkbp:status |
in high-volume manufacturing (as of 2017)
|
| gptkbp:successor |
gptkb:TSMC_7nm
|
| gptkbp:technology |
gptkb:FinFET
|
| gptkbp:transistorDensity |
52.51 MTr/mm²
|
| gptkbp:usedIn |
gptkb:HiSilicon_Kirin_970
gptkb:Apple_A11_Bionic gptkb:Apple_A10X |
| gptkbp:waferSize |
300mm
|
| gptkbp:bfsParent |
gptkb:TSMC_7nm
|
| gptkbp:bfsLayer |
7
|
| https://www.w3.org/2000/01/rdf-schema#label |
TSMC 10nm
|