Statements (22)
Predicate | Object |
---|---|
gptkbp:instanceOf |
semiconductor process node
|
gptkbp:commercialLaunchYear |
2016
|
gptkbp:countryOfOrigin |
gptkb:Hsinchu,_Taiwan
|
gptkbp:developedBy |
gptkb:TSMC
|
https://www.w3.org/2000/01/rdf-schema#label |
TSMC 10nm
|
gptkbp:lithography |
193nm immersion lithography
|
gptkbp:notableClient |
gptkb:Apple
gptkb:HiSilicon |
gptkbp:predecessor |
TSMC 16nm
|
gptkbp:primaryUse |
mobile SoCs
|
gptkbp:size |
10nm
|
gptkbp:status |
in high-volume manufacturing (as of 2017)
|
gptkbp:successor |
gptkb:TSMC_7nm
|
gptkbp:technology |
gptkb:FinFET
|
gptkbp:transistorDensity |
52.51 MTr/mm²
|
gptkbp:usedIn |
gptkb:HiSilicon_Kirin_970
gptkb:Apple_A11_Bionic gptkb:Apple_A10X |
gptkbp:waferSize |
300mm
|
gptkbp:bfsParent |
gptkb:TSMC_7nm
gptkb:N7_(TSMC_7nm) |
gptkbp:bfsLayer |
7
|