Single-Level Cell NAND flash
GPTKB entity
Statements (22)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:SDRAM
|
| gptkbp:abbreviation |
gptkb:SLC_NAND
|
| gptkbp:advantage |
higher endurance
higher cost per bit faster write speeds lower error rates |
| gptkbp:commercialUse |
1990s
|
| gptkbp:contrastsWith |
gptkb:Multi-Level_Cell_NAND_flash
Triple-Level Cell NAND flash |
| gptkbp:dataRetention |
longer than MLC/TLC
|
| https://www.w3.org/2000/01/rdf-schema#label |
Single-Level Cell NAND flash
|
| gptkbp:market |
enterprise storage
industrial applications high-reliability systems |
| gptkbp:numberOfLocations |
1 bit per cell
|
| gptkbp:technology |
gptkb:SDRAM
|
| gptkbp:typicalEndurance |
up to 100,000 write cycles
|
| gptkbp:usedIn |
solid-state drives
USB flash drives memory cards |
| gptkbp:bfsParent |
gptkb:SLC_NAND_flash
|
| gptkbp:bfsLayer |
7
|