Statements (27)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:SDRAM
|
| gptkbp:abbreviation |
gptkb:MLC_NAND_flash
|
| gptkbp:application |
mainstream storage devices
|
| gptkbp:contrastsWith |
gptkb:Single-Level_Cell_NAND_flash
Triple-Level Cell NAND flash |
| gptkbp:cost |
lower than SLC
|
| gptkbp:dataRetention |
lower than SLC
|
| gptkbp:density |
higher than SLC
|
| gptkbp:endurance |
lower than SLC
|
| gptkbp:errorDetection |
higher than SLC
|
| https://www.w3.org/2000/01/rdf-schema#label |
Multi-Level Cell NAND flash
|
| gptkbp:introduced |
late 1990s
|
| gptkbp:manufacturer |
gptkb:Samsung
gptkb:Toshiba gptkb:SK_Hynix Micron |
| gptkbp:market |
high in consumer devices
|
| gptkbp:numberOfLocations |
2 bits per cell
|
| gptkbp:readBy |
slower than SLC
|
| gptkbp:reliability |
lower than SLC
|
| gptkbp:usedIn |
USB flash drives
memory cards consumer SSDs |
| gptkbp:voltageLevelsPerCell |
4
|
| gptkbp:writeSpeed |
slower than SLC
|
| gptkbp:bfsParent |
gptkb:MLC_NAND_flash
|
| gptkbp:bfsLayer |
7
|