Silicon:Antimony Impurity Band Conduction detector
GPTKB entity
Statements (14)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
infrared detector
semiconductor detector |
| gptkbp:abbreviation |
Si:Sb IBC detector
|
| gptkbp:dopant |
antimony
|
| https://www.w3.org/2000/01/rdf-schema#label |
Silicon:Antimony Impurity Band Conduction detector
|
| gptkbp:material |
silicon
|
| gptkbp:operatingSystem |
cryogenic
|
| gptkbp:principle |
impurity band conduction
|
| gptkbp:sensitivity |
infrared radiation
|
| gptkbp:used_in |
gptkb:astronomy
infrared spectroscopy |
| gptkbp:wavelengthRange |
2 to 28 microns
|
| gptkbp:bfsParent |
gptkb:Si:Sb_IBC
|
| gptkbp:bfsLayer |
8
|