Statements (13)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
semiconductor material
|
| gptkbp:alternativeName |
gptkb:Silicon:Antimony_Impurity_Band_Conduction_detector
|
| gptkbp:developedBy |
low dark current infrared detection
|
| gptkbp:hasBandgapType |
impurity band conduction
|
| gptkbp:hasDopant |
antimony
|
| gptkbp:hasHostMaterial |
silicon
|
| https://www.w3.org/2000/01/rdf-schema#label |
Si:Sb IBC
|
| gptkbp:operatingWavelengthRange |
3-5 microns
|
| gptkbp:usedFor |
mid-wave infrared detection
|
| gptkbp:usedIn |
infrared focal plane arrays
infrared photodetectors |
| gptkbp:bfsParent |
gptkb:Infrared_Spectrograph_(IRS)
|
| gptkbp:bfsLayer |
7
|