Statements (13)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:semiconductor_foundry_process
|
| gptkbp:announced |
2019
|
| gptkbp:basedOn |
Samsung 10nm process
|
| gptkbp:developedBy |
gptkb:Samsung_Electronics
|
| gptkbp:locationOfFoundry |
gptkb:South_Korea
|
| gptkbp:marketedAs |
custom 8nm process for NVIDIA
|
| gptkbp:processNode |
8nm
|
| gptkbp:technology |
gptkb:FinFET
|
| gptkbp:usedBy |
gptkb:NVIDIA
|
| gptkbp:usedIn |
gptkb:NVIDIA_GeForce_RTX_30_Series
|
| gptkbp:bfsParent |
gptkb:Nvidia_Ampere
|
| gptkbp:bfsLayer |
7
|
| https://www.w3.org/2000/01/rdf-schema#label |
Samsung 8N
|