Statements (32)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
Electrode
|
| gptkbp:category |
Electronic component
Semiconductor device |
| gptkbp:discoveredIn |
1950s
|
| gptkbp:hasProperty |
High reverse breakdown voltage
High-speed switching Low capacitance Low distortion Wide depletion region |
| https://www.w3.org/2000/01/rdf-schema#label |
PIN Diodes
|
| gptkbp:material |
gptkb:Gallium_arsenide
Silicon |
| gptkbp:operates |
Injection of carriers into intrinsic region
|
| gptkbp:relatedTo |
gptkb:Photodiode
gptkb:Varactor_diode Schottky diode |
| gptkbp:structure |
Intrinsic layer
N-type layer P-type layer |
| gptkbp:symbol |
Diode symbol with 'I' region
|
| gptkbp:usedFor |
Current-controlled resistance
Fast switching Photovoltaic applications |
| gptkbp:usedIn |
gptkb:Attenuators
RF switches Photodetectors High-frequency applications Microwave circuits Optical communication Power electronics |
| gptkbp:bfsParent |
gptkb:Microwave_Electronics
|
| gptkbp:bfsLayer |
5
|