Statements (30)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
Electrode
|
| gptkbp:category |
Electronic component
Semiconductor device |
| gptkbp:discoveredIn |
1950s
|
| gptkbp:hasComponent |
Intrinsic semiconductor
N-type semiconductor P-type semiconductor |
| gptkbp:hasProperty |
Low capacitance
Wide depletion region Acts as insulator under reverse bias Conducts under forward bias High-speed response |
| https://www.w3.org/2000/01/rdf-schema#label |
PIN Diode
|
| gptkbp:material |
gptkb:Gallium_arsenide
Silicon |
| gptkbp:relatedTo |
gptkb:Photodiode
gptkb:Varactor_diode Schottky diode |
| gptkbp:symbol |
Diode symbol with 'I' region
|
| gptkbp:usedFor |
Fast switching
Photodetection Variable resistance |
| gptkbp:usedIn |
gptkb:Attenuators
RF switches Photodetectors High-frequency applications Optical communication RF protection circuits |
| gptkbp:bfsParent |
gptkb:Varactor_Diodes
|
| gptkbp:bfsLayer |
6
|