|
gptkbp:instanceOf
|
gptkb:SDRAM
|
|
gptkbp:advantage
|
execute-in-place (XIP)
lower density
higher cost per bit
slower write and erase speeds
|
|
gptkbp:application
|
medical devices
automotive electronics
network equipment
code shadowing
boot memory
|
|
gptkbp:cellStructure
|
parallel
|
|
gptkbp:contrastsWith
|
gptkb:NAND_Flash
|
|
gptkbp:dataAccessType
|
random access
|
|
gptkbp:dataRetention
|
10-20 years
|
|
gptkbp:endurance
|
10,000 to 100,000 cycles
|
|
gptkbp:eraseBlockSize
|
large
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
NOR Flash
|
|
gptkbp:interface
|
gptkb:serial_(SPI_NOR)
parallel
|
|
gptkbp:introducedIn
|
1988
|
|
gptkbp:inventedBy
|
gptkb:Intel
|
|
gptkbp:market
|
smaller than NAND Flash
|
|
gptkbp:namedAfter
|
NOR logic gate
|
|
gptkbp:notableCompany
|
gptkb:Cypress_Semiconductor
gptkb:Macronix
gptkb:Spansion
gptkb:Intel
gptkb:Winbond
Micron
|
|
gptkbp:readBy
|
gptkb:fire
|
|
gptkbp:technology
|
gptkb:floating-gate_transistor
|
|
gptkbp:usedFor
|
gptkb:consumer_electronics
gptkb:BIOS_chips
embedded systems
microcontrollers
cell phones
firmware storage
code storage
|
|
gptkbp:writeSpeed
|
slower than NAND Flash
|
|
gptkbp:bfsParent
|
gptkb:Winbond_Electronics
gptkb:ATF45C_series
gptkb:Winbond
|
|
gptkbp:bfsLayer
|
6
|