Statements (48)
| Predicate | Object |
|---|---|
| gptkbp:instance_of |
gptkb:Magic:_The_Gathering_set
|
| gptkbp:application |
Data storage
Code execution Firmware storage |
| gptkbp:benefits |
Fast read access
Byte-addressable Higher cost per bit compared to NAND Slower write and erase times compared to NAND |
| gptkbp:capacity |
Up to several gigabits
|
| gptkbp:characteristics |
Random access
Read speed Write speed Erase speed |
| gptkbp:data_usage |
Faster than NAND Flash
Slower than NAND Flash |
| gptkbp:developed_by |
gptkb:Intel
gptkb:Micron_Technology |
| gptkbp:form_factor |
gptkb:Chip
gptkb:Author Package |
| https://www.w3.org/2000/01/rdf-schema#label |
NOR Flash
|
| gptkbp:input_output |
Typically 2.7 V to 3.6 V
|
| gptkbp:manufacturer |
gptkb:Cypress_Semiconductor
gptkb:Intel gptkb:Micron_Technology gptkb:Spansion ST Microelectronics Winbond Electronics |
| gptkbp:market |
gptkb:Io_T_devices
gptkb:Telecommunications_company Consumer electronics Medical devices Automotive applications Industrial applications Smart cards |
| gptkbp:power_consumption |
Low power consumption
|
| gptkbp:speed |
Slower than NAND Flash
|
| gptkbp:sport |
Typically 10,000 to 100,000 write/erase cycles
|
| gptkbp:student_enrollment |
Typically 10 to 20 years
|
| gptkbp:technology |
Charge trap memory
Floating-gate transistor |
| gptkbp:type |
Non-volatile memory
|
| gptkbp:used_in |
Mobile devices
Embedded systems |
| gptkbp:user_interface |
Parallel interface
Serial interface |
| gptkbp:bfsParent |
gptkb:Cypress_Semiconductor's_memory_business
|
| gptkbp:bfsLayer |
6
|