|
gptkbp:instanceOf
|
gptkb:SDRAM
|
|
gptkbp:advantage
|
high density
low cost per bit
limited endurance
data retention loss over time
slower random access
|
|
gptkbp:alternativeTo
|
optical storage
magnetic storage
|
|
gptkbp:application
|
gptkb:consumer_electronics
automotive
industrial devices
enterprise storage
|
|
gptkbp:cellType
|
gptkb:QLC
gptkb:PLC
gptkb:MLC
gptkb:SLC
gptkb:TLC
|
|
gptkbp:contrastsWith
|
gptkb:NOR_Flash
|
|
gptkbp:dataRetention
|
limited
|
|
gptkbp:endurance
|
limited write cycles
|
|
gptkbp:eraseBlockSize
|
large
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
NAND Flash
|
|
gptkbp:interface
|
gptkb:ONFI
gptkb:Toggle_DDR
gptkb:NVMe
|
|
gptkbp:introduced
|
gptkb:Toshiba
|
|
gptkbp:introducedIn
|
1987
|
|
gptkbp:inventedBy
|
gptkb:Fujio_Masuoka
|
|
gptkbp:market
|
dominant in flash memory market
|
|
gptkbp:namedAfter
|
gptkb:NAND_logic_gate
|
|
gptkbp:notableCompany
|
gptkb:Kioxia
gptkb:Western_Digital
gptkb:YMTC
gptkb:Samsung
gptkb:Intel
gptkb:SK_Hynix
Micron
|
|
gptkbp:readBy
|
slower than NOR Flash
|
|
gptkbp:structure
|
gptkb:floating-gate_transistor
|
|
gptkbp:supports
|
3D stacking
multi-level cell storage
|
|
gptkbp:technology
|
gptkb:EEPROM
|
|
gptkbp:usedIn
|
embedded systems
smartphones
tablets
digital cameras
solid-state drives
USB flash drives
memory cards
|
|
gptkbp:writeSpeed
|
faster than NOR Flash
|
|
gptkbp:bfsParent
|
gptkb:Winbond_Electronics
gptkb:Allwinner_A33
gptkb:Winbond
gptkb:Kingston_SSD
|
|
gptkbp:bfsLayer
|
6
|