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gptkbp:instanceOf
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gptkb:microprocessor
gptkb:SDRAM
|
|
gptkbp:advantage
|
shock resistance
limited write cycles
low cost per bit
data retention degradation
high storage density
slower write speed compared to DRAM
|
|
gptkbp:application
|
gptkb:consumer_electronics
enterprise storage
industrial systems
|
|
gptkbp:cellType
|
multi-level cell (MLC)
penta-level cell (PLC)
quad-level cell (QLC)
single-level cell (SLC)
triple-level cell (TLC)
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|
gptkbp:contrastsWith
|
NOR Flash memory
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|
gptkbp:eraseMethod
|
block erase
|
|
gptkbp:feature
|
garbage collection
wear leveling
error correction code (ECC)
bad block management
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
NAND Flash memory
|
|
gptkbp:interface
|
gptkb:ONFI
gptkb:Toggle_DDR
gptkb:UFS
gptkb:eMMC
gptkb:NVMe
|
|
gptkbp:introduced
|
gptkb:Toshiba
|
|
gptkbp:introducedIn
|
1987
|
|
gptkbp:inventedBy
|
gptkb:Fujio_Masuoka
|
|
gptkbp:manufacturer
|
gptkb:Kioxia
gptkb:Western_Digital
gptkb:YMTC
gptkb:Samsung
gptkb:Intel
gptkb:Micron_Technology
gptkb:SK_Hynix
|
|
gptkbp:market
|
dominant in consumer storage
|
|
gptkbp:namedAfter
|
gptkb:NAND_logic_gate
|
|
gptkbp:readBy
|
page read
|
|
gptkbp:structure
|
gptkb:3D_NAND
gptkb:planar_NAND
|
|
gptkbp:technology
|
gptkb:floating-gate_transistor
|
|
gptkbp:usedIn
|
embedded systems
smartphones
tablets
digital cameras
solid-state drives
USB flash drives
memory cards
|
|
gptkbp:writeMethod
|
page write
|
|
gptkbp:bfsParent
|
gptkb:GigaDevice
|
|
gptkbp:bfsLayer
|
6
|