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gptkbp:instanceOf
|
semiconductor process node
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|
gptkbp:announced
|
2020
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|
gptkbp:competitor
|
Intel 3nm
Samsung 3nm GAA
|
|
gptkbp:densityImprovementOverN5
|
~70%
|
|
gptkbp:developedBy
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gptkb:TSMC
|
|
gptkbp:EUVLithography
|
used
|
|
gptkbp:firstCommercialChips
|
gptkb:Apple_A17_Pro
gptkb:Apple_M3
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
N3 (TSMC 3nm)
|
|
gptkbp:locationOfFabs
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gptkb:Taiwan
|
|
gptkbp:massProductionStart
|
late 2022
|
|
gptkbp:notableClient
|
gptkb:Apple
gptkb:AMD
gptkb:Qualcomm
gptkb:NVIDIA
gptkb:Intel
gptkb:MediaTek
|
|
gptkbp:notableFor
|
enables advanced AI chips
enables high performance computing
enables low power consumption
first TSMC node to use extensive EUV
high transistor density
used in flagship smartphones and PCs
|
|
gptkbp:performanceImprovementOverN5
|
~15%
|
|
gptkbp:powerReductionOverN5
|
~30%
|
|
gptkbp:predecessor
|
gptkb:N5_(TSMC_5nm)
|
|
gptkbp:processVariants
|
gptkb:N3X
N3E
N3B
N3P
|
|
gptkbp:size
|
3 nm
|
|
gptkbp:successor
|
N2 (TSMC 2nm)
|
|
gptkbp:technology
|
3 nanometer
|
|
gptkbp:transceiverType
|
gptkb:FinFET
|
|
gptkbp:usedIn
|
gptkb:Apple_M4
gptkb:Qualcomm_Snapdragon_8_Gen_3
gptkb:MediaTek_Dimensity_9300
gptkb:Apple_A17_Pro
gptkb:Apple_M3
|
|
gptkbp:waferDiameter
|
300 mm
|
|
gptkbp:yieldChallenges
|
high complexity
lower initial yield
|
|
gptkbp:bfsParent
|
gptkb:N5_(TSMC_5nm)
|
|
gptkbp:bfsLayer
|
6
|