Multi-Level Cell NAND

GPTKB entity

Statements (32)
Predicate Object
gptkbp:instanceOf flash memory technology
gptkbp:abbreviation gptkb:MLC_NAND
gptkbp:advantage higher storage density
lower endurance
lower write speed
gptkbp:application gptkb:consumer_electronics
enterprise storage
gptkbp:bitErrorRate higher than SLC NAND
gptkbp:cellType gptkb:floating-gate_transistor
gptkbp:contrastsWith Single-Level Cell NAND
Triple-Level Cell NAND
gptkbp:costComparedTo cheaper than SLC NAND
gptkbp:enduranceComparedTo higher than TLC NAND
lower than SLC NAND
https://www.w3.org/2000/01/rdf-schema#label Multi-Level Cell NAND
gptkbp:introduced 1990s
gptkbp:manufacturer gptkb:Samsung
gptkb:Intel
gptkb:Toshiba
gptkb:SK_Hynix
Micron
gptkbp:numberOfLocations 2 bits per cell
gptkbp:readSpeedComparedTo slower than SLC NAND
gptkbp:reliabilityComparedTo lower than SLC NAND
gptkbp:technology gptkb:SDRAM
gptkbp:usedIn solid-state drives
USB flash drives
memory cards
gptkbp:voltageLevelsPerCell 4
gptkbp:writeSpeedComparedTo slower than SLC NAND
gptkbp:bfsParent gptkb:MLC_NAND
gptkbp:bfsLayer 8