gptkbp:instanceOf
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flash memory technology
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gptkbp:abbreviation
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gptkb:MLC_NAND
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gptkbp:advantage
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higher storage density
lower endurance
lower write speed
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gptkbp:application
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gptkb:consumer_electronics
enterprise storage
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gptkbp:bitErrorRate
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higher than SLC NAND
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gptkbp:cellType
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gptkb:floating-gate_transistor
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gptkbp:contrastsWith
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Single-Level Cell NAND
Triple-Level Cell NAND
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gptkbp:costComparedTo
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cheaper than SLC NAND
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gptkbp:enduranceComparedTo
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higher than TLC NAND
lower than SLC NAND
|
https://www.w3.org/2000/01/rdf-schema#label
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Multi-Level Cell NAND
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gptkbp:introduced
|
1990s
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gptkbp:manufacturer
|
gptkb:Samsung
gptkb:Intel
gptkb:Toshiba
gptkb:SK_Hynix
Micron
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gptkbp:numberOfLocations
|
2 bits per cell
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gptkbp:readSpeedComparedTo
|
slower than SLC NAND
|
gptkbp:reliabilityComparedTo
|
lower than SLC NAND
|
gptkbp:technology
|
gptkb:SDRAM
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gptkbp:usedIn
|
solid-state drives
USB flash drives
memory cards
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gptkbp:voltageLevelsPerCell
|
4
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gptkbp:writeSpeedComparedTo
|
slower than SLC NAND
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gptkbp:bfsParent
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gptkb:MLC_NAND
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gptkbp:bfsLayer
|
8
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