Statements (23)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:NAND_flash_memory_type
|
| gptkbp:application |
gptkb:consumer_electronics
|
| gptkbp:cellType |
gptkb:floating-gate_transistor
|
| gptkbp:contrastsWith |
gptkb:SLC_NAND
gptkb:TLC_NAND |
| gptkbp:cost |
higher than TLC NAND
lower than SLC NAND |
| gptkbp:endurance |
higher than TLC NAND
lower than SLC NAND |
| gptkbp:introducedIn |
early 2000s
|
| gptkbp:manufacturer |
gptkb:Samsung
gptkb:Toshiba gptkb:SK_Hynix Micron |
| gptkbp:standsFor |
gptkb:Multi-Level_Cell_NAND
|
| gptkbp:storesBitsPerCell |
2
|
| gptkbp:technology |
gptkb:SDRAM
|
| gptkbp:usedIn |
solid-state drives
USB flash drives memory cards |
| gptkbp:bfsParent |
gptkb:X8M
|
| gptkbp:bfsLayer |
7
|
| https://www.w3.org/2000/01/rdf-schema#label |
MLC NAND
|