Statements (19)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
semiconductor process layer
|
| gptkbp:alternativeName |
gptkb:M1
|
| gptkbp:connects |
transistor contacts
vias to higher metal layers |
| gptkbp:criticalFor |
power distribution
signal routing |
| gptkbp:depot |
gptkb:physical_vapor_deposition
|
| gptkbp:foundIn |
gptkb:CMOS_technology
Bipolar technology |
| gptkbp:function |
interconnect layer
|
| https://www.w3.org/2000/01/rdf-schema#label |
METAL 1
|
| gptkbp:material |
copper
aluminum |
| gptkbp:patternedBy |
photolithography
|
| gptkbp:position |
first metal layer above silicon
|
| gptkbp:thickness |
process dependent
|
| gptkbp:usedIn |
integrated circuit fabrication
|
| gptkbp:bfsParent |
gptkb:Metal_Box
|
| gptkbp:bfsLayer |
7
|