Statements (25)
| Predicate | Object |
|---|---|
| gptkbp:instance_of |
gptkb:chemical_compound
|
| gptkbp:application |
photovoltaics
laser diodes high-frequency electronics |
| gptkbp:associated_band |
1.85 e V
|
| gptkbp:characteristic |
direct bandgap
|
| gptkbp:chemical_formula |
Ga In P
|
| gptkbp:color |
colorless
|
| gptkbp:composed_by |
metal-organic chemical vapor deposition (MOCVD)
molecular beam epitaxy (MBE) |
| gptkbp:cooling_system |
0.1 W/(m· K)
|
| gptkbp:dissolved |
insoluble in water
|
| https://www.w3.org/2000/01/rdf-schema#label |
Gallium Indium Phosphide
|
| gptkbp:mass |
194.45 g/mol
|
| gptkbp:melting_point |
1230 ° C
|
| gptkbp:notable_conductors |
gptkb:Company
|
| gptkbp:population_density |
3.2 g/cm³
|
| gptkbp:related_to |
gptkb:Indium_Phosphide
gptkb:Gallium_Phosphide |
| gptkbp:structure |
zinc blende
|
| gptkbp:uses |
gptkb:LED
optical devices solar cells |
| gptkbp:bfsParent |
gptkb:Indium_Phosphide
|
| gptkbp:bfsLayer |
5
|