Statements (47)
| Predicate | Object |
|---|---|
| gptkbp:instance_of |
gptkb:chemical_compound
|
| gptkbp:alloy_with |
gptkb:Indium_Phosphide
Gallium Nitride |
| gptkbp:application |
laser diodes
solar cells infrared detectors high-frequency electronics |
| gptkbp:associated_band |
2.26 e V
|
| gptkbp:characteristic |
photoluminescence
electroluminescence direct bandgap semiconductor |
| gptkbp:chemical_formula |
Ga P
|
| gptkbp:color |
colorless
|
| gptkbp:composed_by |
chemical vapor deposition
liquid phase epitaxy molecular beam epitaxy hydride vapor phase epitaxy |
| gptkbp:cooling_system |
0.1 W/(m· K)
|
| gptkbp:discovered_by |
gptkb:John_Bardeen
|
| gptkbp:discovery_year |
gptkb:1952
|
| gptkbp:dissolved |
insoluble in water
|
| gptkbp:environmental_impact |
low
|
| https://www.w3.org/2000/01/rdf-schema#label |
Gallium Phosphide
|
| gptkbp:market |
used in consumer electronics
used in telecommunications growing demand in electronics used in optoelectronics |
| gptkbp:mass |
110.73 g/mol
|
| gptkbp:melting_point |
2500 ° C
1515 ° C |
| gptkbp:notable_conductors |
n-type
|
| gptkbp:phase_transition |
liquid to gas
solid to liquid solid to gas solid to amorphous |
| gptkbp:population_density |
3.2 g/cm³
|
| gptkbp:research_areas |
gptkb:nanotechnology
gptkb:quantum_computing material science photonics |
| gptkbp:structure |
zinc blende
|
| gptkbp:toxicity |
non-toxic
|
| gptkbp:uses |
gptkb:LED
semiconductors photovoltaics |
| gptkbp:bfsParent |
gptkb:Indium_Phosphide
|
| gptkbp:bfsLayer |
5
|