Statements (50)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
lithography technology
|
| gptkbp:challenge |
mask defects
resist sensitivity source power tool cost |
| gptkbp:commercialUse |
2019
|
| gptkbp:compatibleWith |
older process nodes
|
| gptkbp:component |
projection optics
photoresist EUV light source photomask |
| gptkbp:developedBy |
gptkb:ASML
|
| gptkbp:enables |
gptkb:AI_accelerators
gptkb:Moore's_Law_scaling mobile processors automotive chips server processors higher transistor density advanced logic chips high-performance computing chips 3 nm chips 5 nm chips advanced DRAM advanced NAND flash advanced integrated circuit fabrication consumer electronics chips faster chips lower power consumption chips smaller feature sizes |
| gptkbp:fullName |
Extreme Ultraviolet Lithography
|
| https://www.w3.org/2000/01/rdf-schema#label |
EUV Lithography
|
| gptkbp:lightSourceType |
laser-produced plasma
|
| gptkbp:mainSupplier |
gptkb:ASML
|
| gptkbp:mask |
reflective mask
|
| gptkbp:mirrorType |
multilayer Bragg reflector
|
| gptkbp:notableClient |
gptkb:Intel
gptkb:Samsung_Electronics gptkb:TSMC |
| gptkbp:replacedBy |
deep ultraviolet lithography
multiple patterning DUV |
| gptkbp:requires |
complex infrastructure
vacuum environment high-precision optics |
| gptkbp:usedBy |
leading-edge foundries
|
| gptkbp:usedFor |
sub-7 nm process nodes
|
| gptkbp:usedIn |
semiconductor manufacturing
|
| gptkbp:wavelengthRange |
13.5 nm
|
| gptkbp:bfsParent |
gptkb:SEMATECH
gptkb:Semiconductor_Fabrication |
| gptkbp:bfsLayer |
8
|