Statements (29)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
semiconductor material
|
| gptkbp:alsoKnownAs |
Cadmium zinc telluride
|
| gptkbp:bandGap |
1.44–2.26 eV
|
| gptkbp:category |
II-VI semiconductor
compound semiconductor |
| gptkbp:chemicalFormula |
Cd1−xZnxTe
|
| gptkbp:containsElement |
zinc
tellurium cadmium |
| gptkbp:crystalSystem |
cubic
|
| gptkbp:density |
5.8–6.2 g/cm³
|
| gptkbp:discoveredIn |
1980s
|
| https://www.w3.org/2000/01/rdf-schema#label |
CdZnTe
|
| gptkbp:manufacturer |
Bridgman method
High Pressure Bridgman method Vertical Gradient Freeze method |
| gptkbp:meltingPoint |
1092 °C
|
| gptkbp:relatedTo |
gptkb:CdTe
gptkb:ZnTe |
| gptkbp:toxicity |
yes
|
| gptkbp:usedFor |
medical imaging
solar cells nuclear spectroscopy radiation detectors infrared optics X-ray detectors gamma-ray detectors |
| gptkbp:bfsParent |
gptkb:CZT
|
| gptkbp:bfsLayer |
7
|