Statements (18)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
NPN bipolar junction transistor
|
| gptkbp:complement |
BC179
|
| gptkbp:countryOfOrigin |
gptkb:United_Kingdom
|
| gptkbp:hFE |
200-800
|
| https://www.w3.org/2000/01/rdf-schema#label |
BC109
|
| gptkbp:leadConfiguration |
EBC (Emitter-Base-Collector)
|
| gptkbp:manufacturer |
gptkb:Fairchild_Semiconductor
gptkb:STMicroelectronics gptkb:Philips |
| gptkbp:maximumCollectorCurrent |
200 mA
|
| gptkbp:maximumCollectorEmitterVoltage |
45 V
|
| gptkbp:maximumPowerDissipation |
300 mW
|
| gptkbp:releaseDate |
1960s
|
| gptkbp:type |
gptkb:TO-18
|
| gptkbp:usedFor |
audio frequency applications
low noise applications |
| gptkbp:bfsParent |
gptkb:BC108
|
| gptkbp:bfsLayer |
8
|