Statements (23)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
NPN bipolar junction transistor
|
| gptkbp:category |
discrete semiconductor device
|
| gptkbp:complement |
gptkb:BC109
gptkb:BC177 |
| gptkbp:hFE |
110 to 800
|
| https://www.w3.org/2000/01/rdf-schema#label |
BC108
|
| gptkbp:introduced |
1966
|
| gptkbp:leadConfiguration |
E-B-C
|
| gptkbp:manufacturer |
gptkb:Fairchild_Semiconductor
gptkb:STMicroelectronics gptkb:Philips |
| gptkbp:material |
Silicon
|
| gptkbp:maximumCollectorBaseVoltage |
30 V
|
| gptkbp:maximumCollectorCurrent |
200 mA
|
| gptkbp:maximumCollectorEmitterVoltage |
30 V
|
| gptkbp:maximumEmitterBaseVoltage |
5 V
|
| gptkbp:maximumPowerDissipation |
300 mW
|
| gptkbp:pinCount |
3
|
| gptkbp:type |
gptkb:TO-18
|
| gptkbp:usedFor |
low noise general purpose amplification
|
| gptkbp:usedIn |
audio frequency applications
|
| gptkbp:bfsParent |
gptkb:TO-18
|
| gptkbp:bfsLayer |
7
|