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gptkbp:instanceOf
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semiconductor manufacturing process
|
|
gptkbp:advantage
|
lower power consumption
higher performance
improved switching speed
|
|
gptkbp:announced
|
2011
|
|
gptkbp:availableOn
|
2012
|
|
gptkbp:developedBy
|
gptkb:Intel
|
|
gptkbp:hasCompany
|
gptkb:Intel
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
22 nm Tri-Gate (FinFET)
|
|
gptkbp:improves
|
planar transistor
|
|
gptkbp:introducedIn
|
gptkb:Ivy_Bridge_microarchitecture
|
|
gptkbp:massProductionStart
|
2011
|
|
gptkbp:notableFeature
|
first 3D transistor in mass production
first high-volume FinFET process
|
|
gptkbp:notableProduct
|
gptkb:Ivy_Bridge_processors
Haswell processors
|
|
gptkbp:predecessor
|
32 nm process
|
|
gptkbp:size
|
22 nanometers
|
|
gptkbp:successor
|
14 nm process
|
|
gptkbp:technology
|
gptkb:FinFET
|
|
gptkbp:transceiverType
|
tri-gate transistor
|
|
gptkbp:transistorGateType
|
3D gate
|
|
gptkbp:usedFor
|
microcontrollers
CPUs
SoCs
|
|
gptkbp:usedIn
|
gptkb:Intel_Core_i5
gptkb:Intel_Core_i7
gptkb:Intel_Core_i3
gptkb:Intel_Atom_Z3000_series
gptkb:Intel_Xeon_E3
|
|
gptkbp:waferSize
|
300 mm
|
|
gptkbp:bfsParent
|
gptkb:Silvermont_microarchitecture
|
|
gptkbp:bfsLayer
|
6
|