thin-film bulk acoustic resonator (FBAR)
GPTKB entity
Statements (23)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
acoustic resonator |
| gptkbp:advantage |
small size
high Q factor low insertion loss |
| gptkbp:alternativeTo |
ceramic filters
|
| gptkbp:application |
oscillators
bandpass filters duplexers |
| gptkbp:commercialUse |
late 1990s
|
| gptkbp:developedBy |
gptkb:Agilent_Technologies
|
| gptkbp:frequency |
1 GHz to 10 GHz
|
| https://www.w3.org/2000/01/rdf-schema#label |
thin-film bulk acoustic resonator (FBAR)
|
| gptkbp:material |
gptkb:zinc_oxide
aluminum nitride |
| gptkbp:operates |
piezoelectric effect
|
| gptkbp:relatedTo |
surface acoustic wave (SAW) filter
|
| gptkbp:structure |
thin piezoelectric film between two electrodes
|
| gptkbp:usedIn |
wireless communication
mobile phones radio frequency (RF) filters |
| gptkbp:bfsParent |
gptkb:BAW_filters
|
| gptkbp:bfsLayer |
7
|