field-effect transistor

GPTKB entity

Statements (52)
Predicate Object
gptkbp:instance_of gptkb:Transistor
gptkbp:benefits scalability
sensitivity to temperature
susceptibility to noise
integration density
gptkbp:can_be_fabricated_using photolithography
chemical vapor deposition
molecular beam epitaxy
gptkbp:characteristic low power consumption
high input impedance
voltage-controlled
gptkbp:has_applications_in analog circuits
digital circuits
RF applications
gptkbp:has_function switching
amplification
gptkbp:has_type gptkb:FET
gptkb:power_adapter
HEMT
JFET
https://www.w3.org/2000/01/rdf-schema#label field-effect transistor
gptkbp:invention gptkb:Walter_Brattain
gptkb:William_Shockley
gptkb:John_Bardeen
gptkbp:is_characterized_by reliability
dynamic range
linearity
thermal stability
lifetime
noise figure
threshold voltage
gate capacitance
transconductance
cut-off frequency
drain current
gate-source voltage
drain-source voltage
on-off ratio
power gain
subthreshold slope
gptkbp:is_part_of gptkb:Company
gptkbp:is_related_to integrated circuits
power electronics
optoelectronics
gptkbp:is_used_in gptkb:mobile_devices
gptkb:Telecommunications
computers
gptkbp:material gptkb:Apple
gallium arsenide
indium phosphide
gptkbp:bfsParent gptkb:William_Shockley
gptkbp:bfsLayer 4