Statements (52)
| Predicate | Object |
|---|---|
| gptkbp:instance_of |
gptkb:Company
|
| gptkbp:bfsLayer |
4
|
| gptkbp:bfsParent |
gptkb:William_Shockley
|
| gptkbp:benefits |
scalability
sensitivity to temperature susceptibility to noise integration density |
| gptkbp:characteristics |
low power consumption
high input impedance voltage-controlled |
| gptkbp:designed_by |
photolithography
chemical vapor deposition molecular beam epitaxy |
| gptkbp:has_method |
switching
amplification |
| gptkbp:has_programs |
analog circuits
digital circuits RF applications |
| gptkbp:has_style |
gptkb:football_match
gptkb:FET HEMT JFET |
| https://www.w3.org/2000/01/rdf-schema#label |
field-effect transistor
|
| gptkbp:invention |
gptkb:Walter_Brattain
gptkb:William_Shockley gptkb:John_Bardeen |
| gptkbp:is_characterized_by |
reliability
dynamic range linearity thermal stability lifetime noise figure threshold voltage gate capacitance transconductance cut-off frequency drain current gate-source voltage drain-source voltage on-off ratio power gain subthreshold slope |
| gptkbp:is_part_of |
gptkb:Company
|
| gptkbp:is_related_to |
integrated circuits
power electronics optoelectronics |
| gptkbp:is_used_in |
gptkb:smartphone
gptkb:Telecommunications_company computers |
| gptkbp:material |
gptkb:TV_Show
gallium arsenide indium phosphide |