Statements (54)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:Company
|
| gptkbp:hasContent |
complexity in design
better linearity higher gain |
| gptkbp:hasFeature |
two gate terminals
|
| gptkbp:hasRelatedPatent |
RF amplification
|
| gptkbp:hasType |
Field-effect transistor
|
| https://www.w3.org/2000/01/rdf-schema#label |
dual-gate MOSFET
|
| gptkbp:isAvailableIn |
various package types
|
| gptkbp:isCharacterizedBy |
high power efficiency
low noise operation low distortion high frequency operation fast switching speed high linearity high input impedance good thermal performance high voltage operation low output capacitance low gate leakage current low noise figure |
| gptkbp:isCounteredBy |
silicon
gallium arsenide |
| gptkbp:isFundedBy |
various semiconductor companies
|
| gptkbp:isMonitoredBy |
gptkb:Robert_N._Noyce
|
| gptkbp:isPartOf |
integrated circuits
analog circuits digital circuits mixed-signal circuits |
| gptkbp:isSimilarTo |
single-gate_MOSFET
|
| gptkbp:isTestedFor |
reliability
thermal stability electrical performance |
| gptkbp:isUsedFor |
signal processing
|
| gptkbp:isUsedIn |
audio equipment
control systems data acquisition systems radar systems amplifiers oscillators signal conditioning test equipment wireless communication systems radio frequency applications satellite communication mobile phones mixers measurement instruments television tuners |
| gptkbp:isVisitedBy |
high-frequency applications
high-gain applications low-noise applications bipolar_junction_transistors_in_RF_applications |
| gptkbp:operatesIn |
voltage control
|