Statements (23)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
semiconductor material
|
| gptkbp:amendedBy |
electrical conductivity
|
| gptkbp:enables |
gptkb:p-n_junction
|
| gptkbp:hasApplication |
integrated circuits
power devices |
| gptkbp:hasDopant |
gptkb:phosphorus
gptkb:gallium gptkb:poisoning boron |
| gptkbp:hasProperty |
contains impurities
|
| gptkbp:hasType |
p-type
n-type |
| https://www.w3.org/2000/01/rdf-schema#label |
doped semiconductors
|
| gptkbp:parentMaterial |
gptkb:gallium_arsenide
silicon germanium |
| gptkbp:usedIn |
electronics
transistors diodes LEDs solar cells |
| gptkbp:bfsParent |
gptkb:Mott_variable-range_hopping
|
| gptkbp:bfsLayer |
6
|