Vertical Cavity Surface Emitting Laser
GPTKB entity
Statements (33)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
semiconductor laser
|
| gptkbp:abbreviation |
gptkb:VCSEL
|
| gptkbp:category |
gptkb:laser
photonics optoelectronics |
| gptkbp:emission_direction |
perpendicular to wafer surface
|
| gptkbp:emits |
coherent light
|
| gptkbp:feature |
energy efficient
compact size high modulation speed can be arrayed on a chip circular output beam low threshold current surface emission vertical cavity structure |
| https://www.w3.org/2000/01/rdf-schema#label |
Vertical Cavity Surface Emitting Laser
|
| gptkbp:inventedBy |
1970s
Kenichi Iga |
| gptkbp:material |
gptkb:indium_phosphide
gptkb:gallium_arsenide |
| gptkbp:used_in |
sensing
laser printers lidar face recognition data communication optical mice optical fiber communications |
| gptkbp:wavelengthRange |
near-infrared
1550 nm 850 nm 1300 nm |
| gptkbp:bfsParent |
gptkb:Distributed_Feedback_Laser
|
| gptkbp:bfsLayer |
7
|