Statements (21)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
industrial equipment
|
| gptkbp:canBe |
multiple wafers simultaneously
|
| gptkbp:component |
cleanroom processing line
|
| gptkbp:enables |
controlled diffusion of gases
formation of oxide layers introduction of dopants |
| gptkbp:foundIn |
semiconductor fabrication plants
|
| https://www.w3.org/2000/01/rdf-schema#label |
Vapor Diffusion Furnace
|
| gptkbp:operatesIn |
high temperatures
|
| gptkbp:requires |
safety interlocks
precise temperature control gas flow control |
| gptkbp:usedFor |
semiconductor manufacturing
thermal oxidation doping of silicon wafers |
| gptkbp:usedIn |
microelectronics fabrication
|
| gptkbp:uses |
heating elements
process gases quartz tubes |
| gptkbp:bfsParent |
gptkb:VDF
|
| gptkbp:bfsLayer |
8
|