Statements (31)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
semiconductor laser
|
| gptkbp:advantage |
can be fabricated in arrays
high modulation speed low threshold current circular beam shape |
| gptkbp:application |
laser printers
lidar face recognition optical mice optical fiber communications 3D sensing |
| gptkbp:category |
photonics
optoelectronics |
| gptkbp:emissionDirection |
perpendicular to wafer surface
|
| gptkbp:emits |
coherent light
|
| gptkbp:firstDemonstrated |
1977
|
| gptkbp:fullName |
Vertical-Cavity Surface-Emitting Laser
|
| https://www.w3.org/2000/01/rdf-schema#label |
VCSEL laser
|
| gptkbp:inventedBy |
gptkb:Jack_Jewell
I. P. Kaminow |
| gptkbp:material |
gptkb:indium_phosphide
gptkb:gallium_arsenide |
| gptkbp:structure |
contains active region
contains distributed Bragg reflectors contains oxide aperture |
| gptkbp:usedIn |
autonomous vehicles
data centers smartphones |
| gptkbp:wavelengthRange |
near-infrared
|
| gptkbp:bfsParent |
gptkb:25GBASE-SR
|
| gptkbp:bfsLayer |
7
|