Statements (16)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
flash memory technology
|
| gptkbp:advantage |
lower cost per bit
higher storage density improved endurance compared to planar NAND |
| gptkbp:application |
solid-state drives
memory cards |
| gptkbp:architecture |
vertical NAND
|
| gptkbp:cellStorage |
3 bits per cell
|
| gptkbp:developedBy |
gptkb:Samsung_Electronics
|
| https://www.w3.org/2000/01/rdf-schema#label |
V-NAND 3-bit MLC
|
| gptkbp:introducedIn |
2014
|
| gptkbp:memoryType |
MLC (Multi-Level Cell)
|
| gptkbp:usedIn |
Samsung 850 EVO SSD
Samsung 860 EVO SSD |
| gptkbp:bfsParent |
gptkb:Samsung_990_PRO
|
| gptkbp:bfsLayer |
6
|