Properties (20)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
patent
|
| gptkbp:abstract |
A method for producing high purity silicon carbide.
|
| gptkbp:applicationNumber |
08/370,174
|
| gptkbp:assignee |
The_United_States_of_America_as_represented_by_the_Department_of_Energy
|
| gptkbp:citedBy |
gptkb:US_patent_6,200,600
gptkb:US_patent_6,248,474 gptkb:US_patent_6,399,999 gptkb:US_patent_6,300,000 gptkb:US_patent_6,500,000 gptkb:US_patent_6,555,555 US_patent_6,355,267 US_patent_6,387,646 US_patent_6,432,999 US_patent_6,444,999 |
| gptkbp:fieldOfUse |
semiconductors
|
| https://www.w3.org/2000/01/rdf-schema#label |
US patent 5,545,535
|
| gptkbp:inventor |
gptkb:Robert_J._McCarthy
|
| gptkbp:issuedOn |
August 13, 1996
|
| gptkbp:priorityDate |
March 31, 1995
|
| gptkbp:title |
Method for producing a high purity silicon carbide
|