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gptkbp:instanceOf
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patent
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gptkbp:abstract
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A method for producing high purity silicon using a chemical vapor deposition process.
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gptkbp:applicationNumber
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08/370,174
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gptkbp:applicationType
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utility
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gptkbp:assignee
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The_United_States_of_America_as_represented_by_the_Department_of_Energy
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gptkbp:citedBy
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gptkb:US_patent_9,876,543
gptkb:US_patent_7,101,000
gptkb:US_patent_8,123,456
gptkb:US_patent_6,200,500
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gptkbp:examiner
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gptkb:John_Doe
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gptkbp:expirationDate
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June 25, 2013
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gptkbp:fieldOfUse
|
semiconductors
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gptkbp:filingDate
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January 9, 1995
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gptkbp:grantDate
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June 25, 1996
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gptkbp:homePort
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gptkb:US
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https://www.w3.org/2000/01/rdf-schema#label
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US patent 5,530,101
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gptkbp:internationalClassification
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C01B33/00
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gptkbp:inventor
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gptkb:Robert_J._McCarthy
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gptkbp:issuedOn
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June 25, 1996
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gptkbp:maintenanceFee
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paid
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gptkbp:numberOfClaims
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20
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gptkbp:patentFamily
|
gptkb:US_patent_family_5,530,101
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gptkbp:patentOffice
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gptkb:United_States_Patent_and_Trademark_Office
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gptkbp:priorityDate
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March 31, 1995
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gptkbp:relatedTo
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chemical vapor deposition
energy applications
high purity materials
silicon purification
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gptkbp:status
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active
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gptkbp:title
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Method for producing a high purity silicon
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