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gptkbp:instanceOf
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patent
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gptkbp:abstract
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A method for producing high purity silicon using a chemical vapor deposition process.
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gptkbp:applicationNumber
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08/329,155
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gptkbp:applicationType
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utility
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gptkbp:assignee
|
The_United_States_of_America_as_represented_by_the_Department_of_Energy
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|
gptkbp:citedBy
|
gptkb:US_patent_9,876,543
gptkb:US_patent_6,200,600
gptkb:US_patent_8,123,456
gptkb:US_patent_7,101,646
|
|
gptkbp:class
|
423/1.1
|
|
gptkbp:examiner
|
gptkb:John_Doe
|
|
gptkbp:fieldOfUse
|
semiconductors
|
|
gptkbp:filingDate
|
October 19, 1994
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|
gptkbp:grantDate
|
April 2, 1996
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
US patent 5,503,805
|
|
gptkbp:internationalClassification
|
C01B33/38
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|
gptkbp:inventor
|
gptkb:Robert_J._McCarthy
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gptkbp:issuedOn
|
April 2, 1996
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|
gptkbp:legalStatus
|
granted
|
|
gptkbp:numberOfClaims
|
20
|
|
gptkbp:patentCitation
|
gptkb:US_patent_11,234,567
gptkb:US_patent_17,890,123
gptkb:US_patent_10,123,456
gptkb:US_patent_12,345,678
gptkb:US_patent_5,678,901
gptkb:US_patent_5,123,456
gptkb:US_patent_6,789,012
gptkb:US_patent_7,890,123
gptkb:US_patent_13,456,789
gptkb:US_patent_9,012,345
gptkb:US_patent_19,012,345
gptkb:US_patent_14,567,890
gptkb:US_patent_16,789,012
US patent 18,901,234
US patent 8,901,234
US_patent_15,678,901
US_patent_20,123,456
|
|
gptkbp:patentFamily
|
gptkb:US_patent_family_5,503,805
|
|
gptkbp:priorityDate
|
March 31, 1994
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|
gptkbp:relatedTo
|
chemical vapor deposition
energy applications
high purity materials
silicon purification
|
|
gptkbp:status
|
active
|
|
gptkbp:subclass
|
423/1.11
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|
gptkbp:title
|
Method for producing a high purity silicon
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