gptkbp:instanceOf
|
patent
|
gptkbp:abstract
|
A method for producing high purity silicon using a chemical vapor deposition process.
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gptkbp:applicationNumber
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08/174,198
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gptkbp:applicationType
|
non-provisional
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gptkbp:assignee
|
The_United_States_of_America_as_represented_by_the_Department_of_Energy
|
gptkbp:citedBy
|
gptkb:US_patent_6,123,123
gptkb:US_patent_8,234,567
gptkb:US_patent_7,123,456
gptkb:US_patent_9,345,678
|
gptkbp:country
|
gptkb:United_States
|
gptkbp:documentType
|
patent document
|
gptkbp:examiner
|
gptkb:John_Doe
|
gptkbp:expirationDate
|
September 6, 2011
|
gptkbp:fieldOfUse
|
semiconductors
|
gptkbp:filedIn
|
gptkb:Robert_J._McCarthy
|
gptkbp:grantDate
|
September 6, 1994
|
https://www.w3.org/2000/01/rdf-schema#label
|
US patent 5,345,000
|
gptkbp:internationalClassification
|
C01B33/38
|
gptkbp:inventor
|
gptkb:Robert_J._McCarthy
|
gptkbp:issuedOn
|
September 6, 1994
|
gptkbp:language
|
English
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gptkbp:numberOfClaims
|
20
|
gptkbp:patentCitation
|
gptkb:US_patent_5,456,789
gptkb:US_patent_5,567,890
gptkb:US_patent_5,890,123
gptkb:US_patent_5,678,901
gptkb:US_patent_5,123,456
gptkb:US_patent_5,234,567
gptkb:US_patent_5,012,345
gptkb:US_patent_5,345,678
gptkb:US_patent_5,789,012
US patent 5,901,234
|
gptkbp:patentFamily
|
US_patent_family
|
gptkbp:patentType
|
utility patent
|
gptkbp:priorityDate
|
March 31, 1993
|
gptkbp:relatedTo
|
chemical vapor deposition
high purity materials
silicon purification
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gptkbp:status
|
active
|
gptkbp:title
|
Method for producing a high purity silicon
|
gptkbp:USClassification
|
423/1.1
|