Properties (22)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
patent
|
| gptkbp:abstract |
A method for producing high purity silicon using a chemical vapor deposition process.
|
| gptkbp:applicationNumber |
08/174,198
|
| gptkbp:assignee |
The_United_States_of_America_as_represented_by_the_Department_of_Energy
|
| gptkbp:citedBy |
gptkb:US_patent_5,800,000
gptkb:US_patent_5,500,000 gptkb:US_patent_5,900,000 gptkb:US_patent_5,700,000 gptkb:US_patent_5,600,000 |
| gptkbp:currentStatus |
Expired
|
| gptkbp:fieldOfUse |
semiconductor manufacturing
|
| https://www.w3.org/2000/01/rdf-schema#label |
US patent 5,330,647
|
| gptkbp:inventor |
gptkb:Robert_J._McCarthy
|
| gptkbp:issuedOn |
July 19, 1994
|
| gptkbp:numberOfClaims |
20
|
| gptkbp:priorityDate |
March 31, 1993
|
| gptkbp:relatedTo |
materials science
energy efficiency semiconductor technology chemical vapor deposition silicon purification |
| gptkbp:title |
Method for producing a high purity silicon
|