|
gptkbp:instanceOf
|
patent
|
|
gptkbp:abstract
|
A method for producing high purity silicon using a chemical vapor deposition process.
|
|
gptkbp:applicationNumber
|
07/407,052
|
|
gptkbp:applicationType
|
utility
|
|
gptkbp:assignee
|
The_United_States_of_America_as_represented_by_the_Department_of_Energy
|
|
gptkbp:citedBy
|
gptkb:US_patent_5,456,789
gptkb:US_patent_5,123,999
gptkb:US_patent_5,678,901
gptkb:US_patent_5,234,123
gptkb:US_patent_5,345,678
|
|
gptkbp:classification
|
H01L 21/00
C01B 33/38
C23C 14/00
|
|
gptkbp:country
|
gptkb:United_States
|
|
gptkbp:expirationDate
|
January 14, 2009
|
|
gptkbp:fieldOfUse
|
semiconductors
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
US patent 5,081,000
|
|
gptkbp:inventor
|
gptkb:Robert_J._McCarthy
|
|
gptkbp:issuedOn
|
January 14, 1992
|
|
gptkbp:legalStatus
|
active
|
|
gptkbp:patentFamily
|
gptkb:US_patent_family_5,678,901
gptkb:US_patent_family_5,123,999
gptkb:US_patent_family_5,456,789
gptkb:US_patent_family_5,081,000
gptkb:US_patent_family_5,234,123
gptkb:US_patent_family_5,345,678
|
|
gptkbp:priorityDate
|
March 31, 1989
|
|
gptkbp:relatedTo
|
chemical vapor deposition
high purity materials
silicon production
|
|
gptkbp:title
|
Method for producing a high purity silicon
|