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gptkbp:instanceOf
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patent
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gptkbp:abstract
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A method for producing high purity silicon using a chemical vapor deposition process.
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gptkbp:applicationNumber
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07/407,052
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gptkbp:applicationType
|
non-provisional
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gptkbp:assignee
|
The_United_States_of_America_as_represented_by_the_Department_of_Energy
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gptkbp:assigneeCountry
|
gptkb:United_States
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gptkbp:citedBy
|
gptkb:US_patent_5,456,789
gptkb:US_patent_5,123,999
gptkb:US_patent_5,678,901
gptkb:US_patent_5,234,123
gptkb:US_patent_5,345,678
|
|
gptkbp:classification
|
H01L 21/00
C01B 33/38
C23C 14/00
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|
gptkbp:country
|
gptkb:United_States
|
|
gptkbp:examiner
|
gptkb:John_Doe
|
|
gptkbp:fieldOfUse
|
semiconductors
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|
gptkbp:filedIn
|
April 28, 1989
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|
gptkbp:fullText
|
true
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|
gptkbp:grantDate
|
January 14, 1992
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|
https://www.w3.org/2000/01/rdf-schema#label
|
US patent 5,080,000
|
|
gptkbp:inventor
|
gptkb:Robert_J._McCarthy
|
|
gptkbp:inventorCountry
|
gptkb:United_States
|
|
gptkbp:issuedOn
|
January 14, 1992
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|
gptkbp:language
|
English
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|
gptkbp:legalStatus
|
active
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|
gptkbp:numberOfClaims
|
20
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|
gptkbp:numberOfFigures
|
5
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|
gptkbp:pageCount
|
10
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|
gptkbp:patentCitation
|
gptkb:US_patent_5,890,123
gptkb:US_patent_5,678,901
gptkb:US_patent_5,012,345
gptkb:US_patent_5,789,012
US patent 5,901,234
|
|
gptkbp:patentExpiration
|
2012-01-14
|
|
gptkbp:patentFamily
|
gptkb:US_patent_family_5,080,000
|
|
gptkbp:patentNumber
|
5,080,000
|
|
gptkbp:patentOffice
|
gptkb:USPTO
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|
gptkbp:patentType
|
utility patent
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|
gptkbp:priorityDate
|
March 31, 1989
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|
gptkbp:relatedPatent
|
gptkb:US_patent_5,456,789
gptkb:US_patent_5,567,890
gptkb:US_patent_5,123,456
gptkb:US_patent_5,234,567
gptkb:US_patent_5,345,678
|
|
gptkbp:relatedTo
|
chemical vapor deposition
high purity materials
silicon purification
|
|
gptkbp:status
|
granted
|
|
gptkbp:title
|
Method for producing a high purity silicon
|