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gptkbp:instanceOf
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patent
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gptkbp:abstract
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A method for producing high purity silicon using a chemical vapor deposition process.
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gptkbp:applicationNumber
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07/370,052
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gptkbp:applicationType
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Utility
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gptkbp:assignee
|
The_United_States_of_America_as_represented_by_the_Department_of_Energy
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gptkbp:citedBy
|
gptkb:US_patent_5,456,789
gptkb:US_patent_5,123,999
gptkb:US_patent_5,678,901
gptkb:US_patent_5,234,123
US_patent_5,345,123
|
|
gptkbp:examiner
|
gptkb:John_Doe
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gptkbp:fieldOfUse
|
semiconductors
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gptkbp:filingDate
|
June 23, 1989
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gptkbp:grantDate
|
October 29, 1991
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https://www.w3.org/2000/01/rdf-schema#label
|
US patent 5,060,000
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|
gptkbp:internationalClassification
|
C01B33/00
C23C14/00
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gptkbp:inventor
|
gptkb:Robert_J._McCarthy
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gptkbp:issuedOn
|
October 29, 1991
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gptkbp:maintenanceFee
|
Paid
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gptkbp:numberOfClaims
|
20
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|
gptkbp:patentFamily
|
gptkb:US_patent_family_5,678,901
gptkb:US_patent_family_5,234,567
gptkb:US_patent_family_5,123,999
gptkb:US_patent_family_5,123,456
gptkb:US_patent_family_5,456,789
gptkb:US_patent_family_5,234,123
gptkb:US_patent_family_5,567,890
gptkb:US_patent_family_5,345,678
US_patent_family_5,012,345
US_patent_family_5,060,000
US_patent_family_5,345,123
US_patent_family_5,789,012
US_patent_family_5,890,123
US_patent_family_5,901,234
|
|
gptkbp:priorityDate
|
March 31, 1989
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gptkbp:relatedTo
|
energy efficiency
semiconductor manufacturing
chemical vapor deposition
high purity materials
silicon purification
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gptkbp:status
|
Expired
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gptkbp:title
|
Method for producing a high purity silicon
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