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gptkbp:instanceOf
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patent
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gptkbp:abstract
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A method for producing high purity silicon using a chemical vapor deposition process.
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gptkbp:application
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Method for producing a high purity silicon
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gptkbp:applicationNumber
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07/370,155
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gptkbp:applicationType
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non-provisional
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gptkbp:assignee
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The_United_States_of_America_as_represented_by_the_Department_of_Energy
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gptkbp:citedBy
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gptkb:US_patent_5,456,789
gptkb:US_patent_5,123,456
gptkb:US_patent_5,234,567
gptkb:US_patent_5,345,678
|
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gptkbp:examiner
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gptkb:John_Doe
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gptkbp:fieldOfUse
|
semiconductors
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gptkbp:filingDate
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June 23, 1989
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gptkbp:grantDate
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October 1, 1991
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https://www.w3.org/2000/01/rdf-schema#label
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US patent 5,053,000
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gptkbp:internationalClassification
|
423/1.1
C01B33/38
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gptkbp:inventor
|
gptkb:Robert_J._McCarthy
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gptkbp:issuedOn
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October 1, 1991
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gptkbp:legalStatus
|
patent granted
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gptkbp:maintenanceFee
|
paid
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gptkbp:numberOfClaims
|
20
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gptkbp:patentCitation
|
gptkb:US_patent_4,678,901
gptkb:US_patent_4,012,345
gptkb:US_patent_4,567,890
gptkb:US_patent_4,789,012
gptkb:US_patent_4,345,678
gptkb:US_patent_4,890,123
gptkb:US_patent_4,456,789
gptkb:US_patent_4,123,456
gptkb:US_patent_4,234,567
US patent 4,901,234
|
|
gptkbp:patentExpiration
|
October 1, 2008
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gptkbp:patentFamily
|
gptkb:US_patent_family_5,053,000
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gptkbp:patentType
|
utility
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gptkbp:priorityDate
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March 31, 1989
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gptkbp:relatedTo
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chemical vapor deposition
high purity materials
silicon production
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gptkbp:status
|
active
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gptkbp:technologyArea
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materials science
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gptkbp:title
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Method for producing a high purity silicon
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